DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SY | - |
dc.contributor.author | Hong, K | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:18:41Z | - |
dc.date.available | 2015-06-25T01:18:41Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2007-04-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000006824 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9597 | - |
dc.description.abstract | The authors determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl using ultraviolet and synchrotron radiation photoemission spectroscopy. The interface dipole energy increased as a function of interfacial layer thickness up to 4 nm. After O-2 plasma treatment on thick-metal (> 4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the O-2 plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier. (c) 2007 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Change of interface dipole energy with interfacial layer thickness and O-2 plasma treatment in metal/organic interface | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2734916 | - |
dc.author.google | Kim, SY | en_US |
dc.author.google | Hong, K | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 90 | en_US |
dc.relation.issue | 18 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.18 | - |
dc.identifier.wosid | 000246210000132 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 18 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 90 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-34247882852 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 18 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | HOLE INJECTION LAYER | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | METALS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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