DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, H | - |
dc.contributor.author | Shin, K | - |
dc.contributor.author | Yang, C | - |
dc.contributor.author | Park, CE | - |
dc.contributor.author | Park, SHK | - |
dc.date.accessioned | 2015-06-25T01:20:29Z | - |
dc.date.available | 2015-06-25T01:20:29Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-10-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000008258 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9622 | - |
dc.description.abstract | The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 degrees C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m(2)/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000017]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Thin-film passivation by atomic layer deposition for organic field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.3000017 | - |
dc.author.google | Jeon, H | en_US |
dc.author.google | Shin, K | en_US |
dc.author.google | Park, SHK | en_US |
dc.author.google | Park, CE | en_US |
dc.author.google | Yang, C | en_US |
dc.relation.volume | 93 | en_US |
dc.relation.issue | 16 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.16 | - |
dc.identifier.wosid | 000260383700068 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 16 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-54949091144 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 26 | - |
dc.description.scptc | 28 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | H2O | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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