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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gutkin, MY | - |
| dc.contributor.author | Sheinerman, AG | - |
| dc.contributor.author | Smirnov, MA | - |
| dc.contributor.author | Kohn, VG | - |
| dc.contributor.author | Argunova, TS | - |
| dc.contributor.author | Je, JH | - |
| dc.contributor.author | Jung, JW | - |
| dc.date.accessioned | 2015-06-25T01:20:33Z | - |
| dc.date.available | 2015-06-25T01:20:33Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2008-10-13 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000008240 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9623 | - |
| dc.description.abstract | We reveal a correlated reduction in the cross sections of two neighboring micropipes (MPs) in the crystal growth of silicon carbide using computer simulation of phase contrast images. The correlated reduction is explained by the exchange of full-core dislocations in a contact-free reaction between two parallel MPs. We develop a theoretical model that describes the energetics of this process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998572] | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Correlated reduction in micropipe cross sections in SiC growth | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.2998572 | - |
| dc.author.google | Gutkin, MY | en_US |
| dc.author.google | Sheinerman, AG | en_US |
| dc.author.google | Jung, JW | en_US |
| dc.author.google | Je, JH | en_US |
| dc.author.google | Argunova, TS | en_US |
| dc.author.google | Kohn, VG | en_US |
| dc.author.google | Smirnov, MA | en_US |
| dc.relation.volume | 93 | en_US |
| dc.relation.issue | 15 | en_US |
| dc.contributor.id | 10123980 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.15 | - |
| dc.identifier.wosid | 000260125100025 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 15 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 93 | - |
| dc.contributor.affiliatedAuthor | Je, JH | - |
| dc.identifier.scopusid | 2-s2.0-54149085012 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 9 | - |
| dc.description.scptc | 11 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | 4H-SIC SCHOTTKY DIODES | - |
| dc.subject.keywordPlus | CARBIDE BULK CRYSTALS | - |
| dc.subject.keywordPlus | SILICON-CARBIDE | - |
| dc.subject.keywordPlus | SUBLIMATION GROWTH | - |
| dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
| dc.subject.keywordPlus | DEFECTS | - |
| dc.subject.keywordPlus | MODEL | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 제정호JE, JUNG HO
- Dept of Materials Science & Enginrg