DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Choi, D | - |
dc.contributor.author | Chung, DS | - |
dc.contributor.author | Yang, C | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Park, CE | - |
dc.contributor.author | Park, SHK | - |
dc.date.accessioned | 2015-06-25T01:20:40Z | - |
dc.date.available | 2015-06-25T01:20:40Z | - |
dc.date.created | 2009-03-17 | - |
dc.date.issued | 2008-09-15 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000008198 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9625 | - |
dc.description.abstract | To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O-2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O-2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm(2) V-1 s(-1), a substhreshold swing of 0.738 V/decade and an on/off ratio of 10(7). Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6. (c) 2008 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2987419 | - |
dc.author.google | Kim, SH | en_US |
dc.author.google | Choi, D | en_US |
dc.author.google | Park, SHK | en_US |
dc.author.google | Park, CE | en_US |
dc.author.google | Jang, J | en_US |
dc.author.google | Yang, C | en_US |
dc.author.google | Chung, DS | en_US |
dc.relation.volume | 93 | en_US |
dc.relation.issue | 11 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.11 | - |
dc.identifier.wosid | 000259797900083 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 11 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-52349122989 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 30 | - |
dc.description.scptc | 38 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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