DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, SJ | - |
dc.contributor.author | Chae, JH | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Park, GH | - |
dc.date.accessioned | 2015-06-25T01:21:30Z | - |
dc.date.available | 2015-06-25T01:21:30Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-03-24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000007632 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9638 | - |
dc.description.abstract | We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed. (C) 2008 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2903153 | - |
dc.author.google | An, Sung Jin | en_US |
dc.author.google | Chae, Jee Hae | en_US |
dc.author.google | Park, Gil H. | en_US |
dc.author.google | Yi, Gyu-Chul | en_US |
dc.relation.volume | 92 | en_US |
dc.relation.issue | 12 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.92, no.12 | - |
dc.identifier.wosid | 000254510300008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 12 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 92 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-41349095900 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 132 | - |
dc.description.scptc | 146 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EXTERNAL QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | P-GAN | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | WELLS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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