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Cited 47 time in webofscience Cited 51 time in scopus
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dc.contributor.authorKang, SJ-
dc.contributor.authorNoh, YY-
dc.contributor.authorBaeg, KJ-
dc.contributor.authorGhim, J-
dc.contributor.authorPark, JH-
dc.contributor.authorKim, DY-
dc.contributor.authorKim, JS-
dc.contributor.authorPark, JH-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:21:53Z-
dc.date.available2015-06-25T01:21:53Z-
dc.date.created2009-08-25-
dc.date.issued2008-02-04-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000007497en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9644-
dc.description.abstractWe investigated preferentially oriented pentacene grains on rubbed polyimide (PI) layers under various conditions, such as substrate temperature and cumulative rubbing number. In case of pentacene thin films deposited on rubbed PI at room temperature (RT), compared to unrubbed, the field-effect mobilities were improved by two- to threefold in contrast to the cases of elevated temperature. From the results of crystalline in-plane orientation and thin-film versus bulk-phase ratio, we proposed that pentacence crystalline orientation on a rubbed PI layer could be more favorable at RT, whereas the heating energy might weaken the interaction energy between pentacene molecules and aligned PI layer. (c) 2008 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEffect of rubbed polyimide layer on the field-effect mobility in pentacene thin-film transistors-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2830694-
dc.author.googleKang, SJen_US
dc.author.googleNoh, YYen_US
dc.author.googleCho, Ken_US
dc.author.googleKim, JSen_US
dc.author.googleKim, DYen_US
dc.author.googlePark, JHen_US
dc.author.googleGhim, Jen_US
dc.author.googleBaeg, KJen_US
dc.relation.volume92en_US
dc.relation.issue5en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.92, no.5-
dc.identifier.wosid000253016500042-
dc.date.tcdate2019-01-01-
dc.citation.number5-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume92-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-38949084124-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc37-
dc.description.scptc41*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordPlusALIGNMENT-
dc.subject.keywordPlusORIENTATION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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