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Cited 9 time in webofscience Cited 9 time in scopus
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dc.contributor.authorSon, J-
dc.contributor.authorCagnon, J-
dc.contributor.authorStemmer, S-
dc.date.accessioned2015-06-25T01:22:12Z-
dc.date.available2015-06-25T01:22:12Z-
dc.date.created2013-05-01-
dc.date.issued2009-02-09-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000027543en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9649-
dc.description.abstractCoherent, epitaxial Pt films with root-mean-square surface roughness values of less than one unit cell were grown on (001) SrTiO3 substrates by dc sputtering. These Pt films served as bottom electrodes for epitaxial SrTiO3 tunnel barriers grown by rf magnetron sputtering. The SrTiO3 barriers were free of pinholes and showed mean surface roughness values of less than one unit cell. Barriers with a thickness of 4.5 nm showed excellent insulating properties and nonlinear current-voltage characteristics. At high bias fields, a reproducible hysteresis and deviation from the ideal tunneling behavior were observed.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerican institute of physics-
dc.relation.isPartOfApplied Physics Letters-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleElectrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.3081110-
dc.author.googleSon, Jen_US
dc.author.googleCagnon, Jen_US
dc.author.googleStemmer, Sen_US
dc.relation.volume94en_US
dc.relation.issue6en_US
dc.contributor.id10138992en_US
dc.relation.journalApplied Physics Lettersen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physics Letters, v.94, no.6-
dc.identifier.wosid000263409400076-
dc.date.tcdate2019-01-01-
dc.citation.number6-
dc.citation.titleApplied Physics Letters-
dc.citation.volume94-
dc.contributor.affiliatedAuthorSon, J-
dc.identifier.scopusid2-s2.0-60349107987-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.description.scptc9*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusLOCALIZED STATES-
dc.subject.keywordPlusJUNCTIONS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorelectrical conductivity-
dc.subject.keywordAuthorelectrodes-
dc.subject.keywordAuthormetallic epitaxial layers-
dc.subject.keywordAuthorplatinum-
dc.subject.keywordAuthorsputter deposition-
dc.subject.keywordAuthorstrontium compounds-
dc.subject.keywordAuthorsurface roughness-
dc.subject.keywordAuthortunnelling-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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