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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, CH | - |
| dc.contributor.author | Yoo, J | - |
| dc.contributor.author | Doh, YJ | - |
| dc.contributor.author | Yi, GC | - |
| dc.date.accessioned | 2015-06-25T01:22:49Z | - |
| dc.date.available | 2015-06-25T01:22:49Z | - |
| dc.date.created | 2010-03-31 | - |
| dc.date.issued | 2009-01-26 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000020295 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9659 | - |
| dc.description.abstract | We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3075606 | - |
| dc.author.google | Lee, CH | en_US |
| dc.author.google | Yoo, J | en_US |
| dc.author.google | Yi, GC | en_US |
| dc.author.google | Doh, YJ | en_US |
| dc.relation.volume | 94 | en_US |
| dc.relation.issue | 4 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.4 | - |
| dc.identifier.wosid | 000262971800118 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 4 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 94 | - |
| dc.contributor.affiliatedAuthor | Yi, GC | - |
| dc.identifier.scopusid | 2-s2.0-59349120063 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 18 | - |
| dc.description.scptc | 25 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | RADIAL NANOWIRE HETEROSTRUCTURES | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | FLEXIBLE ELECTRONICS | - |
| dc.subject.keywordPlus | TRANSPARENT | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordAuthor | field effect transistors | - |
| dc.subject.keywordAuthor | II-VI semiconductors | - |
| dc.subject.keywordAuthor | magnesium compounds | - |
| dc.subject.keywordAuthor | nanostructured materials | - |
| dc.subject.keywordAuthor | nanotechnology | - |
| dc.subject.keywordAuthor | passivation | - |
| dc.subject.keywordAuthor | semiconductor heterojunctions | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
| dc.subject.keywordAuthor | zinc compounds | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이규철YI, GYU CHUL
- Dept of Materials Science & Enginrg