DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YJ | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2015-06-25T01:22:55Z | - |
dc.date.available | 2015-06-25T01:22:55Z | - |
dc.date.created | 2010-04-01 | - |
dc.date.issued | 2009-11-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000020279 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9661 | - |
dc.description.abstract | We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Vertically aligned ZnO nanostructures grown on graphene layers | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3266836 | - |
dc.author.google | Kim, YJ | en_US |
dc.author.google | Lee, JH | en_US |
dc.author.google | Yi, GC | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 21 | en_US |
dc.relation.startpage | 213101 | en_US |
dc.relation.lastpage | 213101 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.21, pp.213101 - 213101 | - |
dc.identifier.wosid | 000272895100031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 213101 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 213101 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Kim, YJ | - |
dc.identifier.scopusid | 2-s2.0-71549132710 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 121 | - |
dc.description.scptc | 134 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | nanofabrication | - |
dc.subject.keywordAuthor | nanostructured materials | - |
dc.subject.keywordAuthor | nucleation | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor growth | - |
dc.subject.keywordAuthor | surface morphology | - |
dc.subject.keywordAuthor | vapour phase epitaxial growth | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.