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Cited 35 time in webofscience Cited 44 time in scopus
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dc.contributor.authorLee, YJ-
dc.contributor.authorLin, SY-
dc.contributor.authorChiu, CH-
dc.contributor.authorLu, TC-
dc.contributor.authorKuo, HC-
dc.contributor.authorWang, SC-
dc.contributor.authorChhajed, S-
dc.contributor.authorKim, JK-
dc.contributor.authorSchubert, EF-
dc.date.accessioned2015-06-25T01:23:39Z-
dc.date.available2015-06-25T01:23:39Z-
dc.date.created2009-09-03-
dc.date.issued2009-04-06-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000018610en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9673-
dc.description.abstractHere we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleHigh output power density from GaN-based two-dimensional nanorod light-emitting diode arrays-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.3119192-
dc.author.googleLee, YJen_US
dc.author.googleLin, SYen_US
dc.author.googleSchubert, EFen_US
dc.author.googleKim, JKen_US
dc.author.googleChhajed, Sen_US
dc.author.googleWang, SCen_US
dc.author.googleKuo, HCen_US
dc.author.googleLu, TCen_US
dc.author.googleChiu, CHen_US
dc.relation.volume94en_US
dc.relation.issue14en_US
dc.contributor.id10100864en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.94, no.14-
dc.identifier.wosid000265083700011-
dc.date.tcdate2019-01-01-
dc.citation.number14-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume94-
dc.contributor.affiliatedAuthorKim, JK-
dc.identifier.scopusid2-s2.0-64349095619-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc31-
dc.description.scptc41*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusBRIGHTNESS-
dc.subject.keywordPlusNM-
dc.subject.keywordAuthorgallium compounds-
dc.subject.keywordAuthorIII-V semiconductors-
dc.subject.keywordAuthorlight emitting diodes-
dc.subject.keywordAuthornanofabrication-
dc.subject.keywordAuthornanophotonics-
dc.subject.keywordAuthorvapour deposition-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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