DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dai, Q | - |
dc.contributor.author | Schubert, MF | - |
dc.contributor.author | Kim, MH | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Koleske, DD | - |
dc.contributor.author | Crawford, MH | - |
dc.contributor.author | Lee, SR | - |
dc.contributor.author | Fischer, AJ | - |
dc.contributor.author | Thaler, G | - |
dc.contributor.author | Banas, MA | - |
dc.date.accessioned | 2015-06-25T01:23:43Z | - |
dc.date.available | 2015-06-25T01:23:43Z | - |
dc.date.created | 2009-09-03 | - |
dc.date.issued | 2009-03-16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018608 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9674 | - |
dc.description.abstract | Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3x10(8) cm(-2)) is as high as 64%. The measured nonradiative coefficient A varies from 6x10(7) to 2x10(8) s(-1) as the dislocation density increases from 5.3x10(8) to 5.7x10(9) cm(-2), respectively. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3100773 | - |
dc.author.google | Dai, Q | en_US |
dc.author.google | Schubert, MF | en_US |
dc.author.google | Banas, MA | en_US |
dc.author.google | Thaler, G | en_US |
dc.author.google | Fischer, AJ | en_US |
dc.author.google | Lee, SR | en_US |
dc.author.google | Crawford, MH | en_US |
dc.author.google | Koleske, DD | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Kim, JK | en_US |
dc.author.google | Kim, MH | en_US |
dc.relation.volume | 94 | en_US |
dc.relation.issue | 11 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.11 | - |
dc.identifier.wosid | 000264380300009 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 11 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-63049116730 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 173 | - |
dc.description.scptc | 189 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | carrier density | - |
dc.subject.keywordAuthor | dislocation density | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | nonradiative transitions | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor growth | - |
dc.subject.keywordAuthor | semiconductor heterojunctions | - |
dc.subject.keywordAuthor | semiconductor quantum wells | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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