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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhu, D | - |
| dc.contributor.author | Xu, JR | - |
| dc.contributor.author | Noemaun, AN | - |
| dc.contributor.author | Kim, JK | - |
| dc.contributor.author | Schubert, EF | - |
| dc.contributor.author | Crawford, MH | - |
| dc.contributor.author | Koleske, DD | - |
| dc.date.accessioned | 2015-06-25T01:23:51Z | - |
| dc.date.available | 2015-06-25T01:23:51Z | - |
| dc.date.created | 2009-09-03 | - |
| dc.date.issued | 2009-02-23 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000018606 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9676 | - |
| dc.description.abstract | We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3089687 | - |
| dc.author.google | Zhu, D | en_US |
| dc.author.google | Xu, JR | en_US |
| dc.author.google | Koleske, DD | en_US |
| dc.author.google | Crawford, MH | en_US |
| dc.author.google | Schubert, EF | en_US |
| dc.author.google | Kim, JK | en_US |
| dc.author.google | Noemaun, AN | en_US |
| dc.relation.volume | 94 | en_US |
| dc.relation.issue | 8 | en_US |
| dc.contributor.id | 10100864 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.8 | - |
| dc.identifier.wosid | 000263804400013 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 8 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 94 | - |
| dc.contributor.affiliatedAuthor | Kim, JK | - |
| dc.identifier.scopusid | 2-s2.0-61349101730 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 88 | - |
| dc.description.scptc | 95 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | MODEL | - |
| dc.subject.keywordPlus | GAN | - |
| dc.subject.keywordAuthor | elemental semiconductors | - |
| dc.subject.keywordAuthor | gallium compounds | - |
| dc.subject.keywordAuthor | III-V semiconductors | - |
| dc.subject.keywordAuthor | indium compounds | - |
| dc.subject.keywordAuthor | light emitting diodes | - |
| dc.subject.keywordAuthor | numerical analysis | - |
| dc.subject.keywordAuthor | semiconductor doping | - |
| dc.subject.keywordAuthor | semiconductor quantum wells | - |
| dc.subject.keywordAuthor | silicon | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 김종규KIM, JONG KYU
- Dept of Materials Science & Enginrg