DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CJ | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Lee, HS | - |
dc.contributor.author | Lee, G | - |
dc.contributor.author | Kim, GS | - |
dc.contributor.author | Jo, MH | - |
dc.date.accessioned | 2015-06-25T01:24:06Z | - |
dc.date.available | 2015-06-25T01:24:06Z | - |
dc.date.created | 2009-08-20 | - |
dc.date.issued | 2009-04-27 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000017993 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9680 | - |
dc.description.abstract | We demonstrate fabrication of vertically aligned, intrananowire p-n diodes by large-area epitaxial growth of Si nanowires (NWs). The axially modulated doping profile of p-n junctions is achieved by in situ doping with alternating addition of dopants in the axial sequence during Au-assisted chemical vapor deposition. We provide direct evidence of the intra-NW p-n junctions using scanning local probes in both individual NWs and vertically aligned NWs at large areas. Our study suggests implication for integrated electronics and optoelectronics based on bottom-up Si NWs. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3126037 | - |
dc.author.google | Kim, CJ | en_US |
dc.author.google | Lee, D | en_US |
dc.author.google | Jo, MH | en_US |
dc.author.google | Kim, GS | en_US |
dc.author.google | Lee, G | en_US |
dc.author.google | Lee, HS | en_US |
dc.relation.volume | 94 | en_US |
dc.relation.issue | 17 | en_US |
dc.contributor.id | 10176415 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.17 | - |
dc.identifier.wosid | 000265738700064 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 17 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | Kim, CJ | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-65449181639 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | PHOSPHINE | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | doping profiles | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | gold | - |
dc.subject.keywordAuthor | integrated optoelectronics | - |
dc.subject.keywordAuthor | nanoelectronics | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | p-n junctions | - |
dc.subject.keywordAuthor | semiconductor diodes | - |
dc.subject.keywordAuthor | semiconductor doping | - |
dc.subject.keywordAuthor | silicon | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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