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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Son, J | - |
| dc.contributor.author | Moetakef, P | - |
| dc.contributor.author | LeBeau, JM | - |
| dc.contributor.author | Ouellette, D | - |
| dc.contributor.author | Balents, L | - |
| dc.contributor.author | Allen, SJ | - |
| dc.contributor.author | Stemmer, S | - |
| dc.date.accessioned | 2015-06-25T01:24:49Z | - |
| dc.date.available | 2015-06-25T01:24:49Z | - |
| dc.date.created | 2013-05-01 | - |
| dc.date.issued | 2010-02-08 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000027530 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9692 | - |
| dc.description.abstract | Electrical resistivity and magnetotransport are explored for thin (3-30 nm), epitaxial LaNiO3 films. Films were grown on three different substrates to obtain LaNiO3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d-band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is "holelike." Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | American institute of physics | - |
| dc.relation.isPartOf | Applied Physics Letters | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3309713 | - |
| dc.author.google | Son, J | en_US |
| dc.author.google | Moetakef, P | en_US |
| dc.author.google | Stemmer, S | en_US |
| dc.author.google | Allen, SJ | en_US |
| dc.author.google | Balents, L | en_US |
| dc.author.google | Ouellette, D | en_US |
| dc.author.google | LeBeau, JM | en_US |
| dc.relation.volume | 96 | en_US |
| dc.relation.issue | 6 | en_US |
| dc.contributor.id | 10138992 | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.96, no.6 | - |
| dc.identifier.wosid | 000274516900041 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 6 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 96 | - |
| dc.contributor.affiliatedAuthor | Son, J | - |
| dc.identifier.scopusid | 2-s2.0-76749136393 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 125 | - |
| dc.description.scptc | 125 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
| dc.subject.keywordPlus | BAND-STRUCTURE | - |
| dc.subject.keywordPlus | RNIO3 R | - |
| dc.subject.keywordPlus | CONDUCTION | - |
| dc.subject.keywordPlus | SYSTEMS | - |
| dc.subject.keywordPlus | BEHAVIOR | - |
| dc.subject.keywordAuthor | electrical resistivity | - |
| dc.subject.keywordAuthor | epitaxial layers | - |
| dc.subject.keywordAuthor | Hall effect | - |
| dc.subject.keywordAuthor | internal stresses | - |
| dc.subject.keywordAuthor | lanthanum compounds | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 손준우SON, JUNWOO
- Dept of Materials Science & Enginrg