DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, K | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Yang, C | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Cha, H | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2015-06-25T01:25:30Z | - |
dc.date.available | 2015-06-25T01:25:30Z | - |
dc.date.created | 2010-11-24 | - |
dc.date.issued | 2010-09-06 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000022080 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9703 | - |
dc.description.abstract | We improved the device performance of N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm(2)/V s, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488817] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.3488817 | - |
dc.author.google | Hong, K | en_US |
dc.author.google | Kim, SH | en_US |
dc.author.google | Park, CE | en_US |
dc.author.google | Cha, H | en_US |
dc.author.google | Jang, J | en_US |
dc.author.google | Yang, C | en_US |
dc.relation.volume | 97 | en_US |
dc.relation.issue | 10 | en_US |
dc.relation.startpage | 103304 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.10, pp.103304 | - |
dc.identifier.wosid | 000282478800050 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 103304 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-77956589454 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 17 | - |
dc.description.scptc | 17 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LEVEL | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.