Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Abstract

Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (D-it), and flatband voltage (V-FB) shift were achieved by PE-ALD TiO2 capping layer.