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dc.contributor.authorJHI, SEUNG HOON-
dc.date.accessioned2019-04-08T05:36:09Z-
dc.date.available2019-04-08T05:36:09Z-
dc.date.created2019-03-11-
dc.date.issued2018-10-29-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/97460-
dc.publisher카이스트-
dc.relation.isPartOfThe 21st asian workshop on first-principles electronic structure calculations-
dc.relation.isPartOfThe 21st asian workshop on first-principles electronic structure calculations-
dc.titleEmergence of out-plane ferroelectricity in atomically thin A0.5B0.5X2 (A=W, Mo; B=Re, Tc; X=S, Se, Te) monolayer-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 21st asian workshop on first-principles electronic structure calculations-
dc.citation.conferenceDate2018-10-29-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace대전, 카이스트-
dc.citation.titleThe 21st asian workshop on first-principles electronic structure calculations-
dc.contributor.affiliatedAuthorJHI, SEUNG HOON-
dc.description.journalClass2-
dc.description.journalClass2-

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