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Cited 5 time in webofscience Cited 10 time in scopus
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dc.contributor.authorKisoo Kim-
dc.contributor.authorKihyong Hong-
dc.contributor.authorIllhwan Lee-
dc.contributor.authorSungjun Kim-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:28:42Z-
dc.date.available2015-06-25T01:28:42Z-
dc.date.created2015-03-05-
dc.date.issued2012-10-01-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000026165en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9756-
dc.description.abstractWe investigated alkali metal doping mechanism by comparative analysis between an Mg-Alq(3) co-deposition (Mg:Alq(3)) and an Mg deposition on Alq(3) films (Mg/Alq(3)). The operating voltage decreased by 0.4V and the luminance increased by 60 cd/m(2) at 11 mA/cm(2) for devices constructed from the Mg: Alq(3). However, the device characteristics of Mg/Alq(3) samples were degraded. Our experimental results using an in-situ photoemission study showed that alkali metal doping in Alq(3) did not induce band bending, but reduce electron injection barrier by charge transfer from alkali metals to Alq(3) molecules. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4753796]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerican Institute of Physics-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleElectron injection in magnesium-doped organic light emitting diodes-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4753796-
dc.author.googleKim, Ken_US
dc.author.googleHong, Ken_US
dc.author.googleLee, JLen_US
dc.author.googleKim, Sen_US
dc.author.googleLee, Ien_US
dc.relation.volume101en_US
dc.relation.issue14en_US
dc.relation.startpage141102en_US
dc.relation.lastpage141105en_US
dc.contributor.id10105416en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.14, pp.141102 - 141105-
dc.identifier.wosid000309603300002-
dc.date.tcdate2019-01-01-
dc.citation.endPage141105-
dc.citation.number14-
dc.citation.startPage141102-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-84867543700-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc4-
dc.description.scptc10*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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