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Cited 113 time in webofscience Cited 113 time in scopus
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dc.contributor.authorDavid S. Meyaard-
dc.contributor.authorQifeng Shan-
dc.contributor.authorJaehee Cho-
dc.contributor.authorE. Fred Schubert-
dc.contributor.authorSang-Heon Han-
dc.contributor.authorMin-Ho Kim-
dc.contributor.authorCheolsoo Sone-
dc.contributor.authorSeung Jae Oh-
dc.contributor.authorKim, JK-
dc.date.accessioned2015-06-25T01:29:00Z-
dc.date.available2015-06-25T01:29:00Z-
dc.date.created2012-03-29-
dc.date.issued2012-02-20-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000025355en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9761-
dc.description.abstractThe effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688041]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleTemperature dependent efficiency droop in GaInN light-emitting diodes with different current densities-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.3688041-
dc.author.googleMeyaard, DSen_US
dc.author.googleShan, QFen_US
dc.author.googleKim, JKen_US
dc.author.googleOh, SJen_US
dc.author.googleSone, Cen_US
dc.author.googleKim, MHen_US
dc.author.googleHan, SHen_US
dc.author.googleSchubert, EFen_US
dc.author.googleCho, Jen_US
dc.relation.volume100en_US
dc.relation.issue8en_US
dc.contributor.id10100864en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.100, no.8-
dc.identifier.wosid000300711200006-
dc.date.tcdate2019-01-01-
dc.citation.number8-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume100-
dc.contributor.affiliatedAuthorKim, JK-
dc.identifier.scopusid2-s2.0-84863240712-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc65-
dc.description.scptc62*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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