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Cited 10 time in webofscience Cited 9 time in scopus
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dc.contributor.authorKisoo Kim-
dc.contributor.authorKihyun Hong-
dc.contributor.authorBonhyeong Koo-
dc.contributor.authorIllhwan Lee-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:30:12Z-
dc.date.available2015-06-25T01:30:12Z-
dc.date.created2015-03-05-
dc.date.issued2013-02-25-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000027723en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9780-
dc.description.abstractThe transmittance of Ag-based electrode increased through suppressing surface plasmons (SPs) coupling. When 10-nm-thick Ag was deposited on small-dielectric-constant (epsilon) film (LiF, SiO), SPs coupling was induced, resulting in low transmittance (<40%) in visible region. At the Ag/large-epsilon oxide interface (WO3 and MoO3), SPs were suppressed, and the film showed increased transmittance (similar to 80%). Organic light emitting diodes using Ag/WO3 (epsilon: 35) as a transparent electrode showed 1.26 times greater luminance and 32.6% greater power efficiency than using Ag/LiF (epsilon: 5). These results provide us with an important guideline for enhancing the transmittance of Ag/dielectric film by controlling SPs coupling. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793702]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerican Physics Society-
dc.relation.isPartOfApplied Physics Letters-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleTransparency controllable silver based electrode for flexible optoelectronics-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4793702-
dc.author.googleKim, Ken_US
dc.author.googleHong, Ken_US
dc.author.googleLee, JLen_US
dc.author.googleLee, Ien_US
dc.author.googleKoo, Ben_US
dc.relation.volume102en_US
dc.relation.issue8en_US
dc.relation.startpage081118-1en_US
dc.relation.lastpage081118-3en_US
dc.contributor.id10105416en_US
dc.relation.journalApplied Physics Lettersen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physics Letters, v.102, no.8, pp.81118-1 - 81118-3-
dc.identifier.wosid000315597000018-
dc.date.tcdate2019-01-01-
dc.citation.endPage81118-3-
dc.citation.number8-
dc.citation.startPage81118-1-
dc.citation.titleApplied Physics Letters-
dc.citation.volume102-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-84874881657-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc6*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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