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Cited 16 time in webofscience Cited 17 time in scopus
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dc.contributor.authorBiswas, A-
dc.contributor.authorRossen, PB-
dc.contributor.authorRavich-
dc.contributor.authorran, J-
dc.contributor.authorChu, YH-
dc.contributor.authorLee, YW-
dc.contributor.authorYang, CH-
dc.contributor.authorRamesh, R-
dc.contributor.authorJeong, YH-
dc.date.accessioned2015-06-25T01:30:16Z-
dc.date.available2015-06-25T01:30:16Z-
dc.date.created2013-04-11-
dc.date.issued2013-02-04-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000027472en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9781-
dc.description.abstractWe demonstrate that thermal annealing in cation controlled environments is an effective means to obtain atomically flat and chemically single terminated surfaces of a layer structured substrate. The effectiveness of the cation controlled annealing method is proved with SrLaAlO4, which is a representative layer structured substrate of A(2)BO(4) type. Potassium ion scattering, in particular, shows that the method allows not only single termination but also selective termination of either A-or B-site on the substrate. We further demonstrate that the chemical nature of underlying SrLaAlO4 substrates is of critical importance in the growth of SrRuO3 thin films resulting in different morphologies and transport properties. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790575]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAIP-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSelective A- or B-site single termination on surfaces of layered oxide SrLaAlO4-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.4790575-
dc.author.googleBiswas, Aen_US
dc.author.googleRossen, PBen_US
dc.author.googleJeong, YHen_US
dc.author.googleRamesh, Ren_US
dc.author.googleYang, CHen_US
dc.author.googleLee, YWen_US
dc.author.googleChu, YHen_US
dc.author.googleRavichandran, Jen_US
dc.relation.volume102en_US
dc.relation.issue5en_US
dc.contributor.id10052189en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.102, no.5-
dc.identifier.wosid000314770300014-
dc.date.tcdate2019-01-01-
dc.citation.number5-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume102-
dc.contributor.affiliatedAuthorRamesh, R-
dc.identifier.scopusid2-s2.0-84874023754-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc5*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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