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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jung, KH | - |
| dc.contributor.author | Bae, SY | - |
| dc.contributor.author | Kim, KH | - |
| dc.contributor.author | Cho, MJ | - |
| dc.contributor.author | Lee, K | - |
| dc.contributor.author | Kim, ZH | - |
| dc.contributor.author | Choi, DH | - |
| dc.contributor.author | Lee, DH | - |
| dc.contributor.author | Chung, DS | - |
| dc.contributor.author | Park, CE | - |
| dc.date.accessioned | 2015-06-25T01:41:11Z | - |
| dc.date.available | 2015-06-25T01:41:11Z | - |
| dc.date.created | 2009-12-21 | - |
| dc.date.issued | 2009-01 | - |
| dc.identifier.issn | 1359-7345 | - |
| dc.identifier.other | 2015-OAK-0000019549 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9958 | - |
| dc.description.abstract | New anthracene-based X-shaped conjugated molecules 1 and 2 for use as highly soluble p-type organic semiconductors were developed and exhibited large field-effect mobilities of 0.04 cm(2) V-1 s(-1) (I-on/I-off = 2.8 x 10(5)) and 0.24 cm(2) V-1 s(-1) (I-on/I-off = 5.4 x 10(6)) for devices of 1 and 2, respectively. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | ROYAL SOC CHEMISTRY | - |
| dc.relation.isPartOf | CHEMICAL COMMUNICATIONS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | High-mobility anthracene-based X-shaped conjugated molecules for thin film transistors | - |
| dc.type | Article | - |
| dc.contributor.college | 화학공학과 | en_US |
| dc.identifier.doi | 10.1039/B911780F | - |
| dc.author.google | Jung, KH | en_US |
| dc.author.google | Bae, SY | en_US |
| dc.author.google | Park, CE | en_US |
| dc.author.google | Chung, DS | en_US |
| dc.author.google | Lee, DH | en_US |
| dc.author.google | Choi, DH | en_US |
| dc.author.google | Kim, ZH | en_US |
| dc.author.google | Lee, K | en_US |
| dc.author.google | Cho, MJ | en_US |
| dc.author.google | Kim, KH | en_US |
| dc.relation.issue | 35 | en_US |
| dc.relation.startpage | 5290 | en_US |
| dc.relation.lastpage | 5292 | en_US |
| dc.contributor.id | 10104044 | en_US |
| dc.relation.journal | CHEMICAL COMMUNICATIONS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | CHEMICAL COMMUNICATIONS, no.35, pp.5290 - 5292 | - |
| dc.identifier.wosid | 000269326900023 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 5292 | - |
| dc.citation.number | 35 | - |
| dc.citation.startPage | 5290 | - |
| dc.citation.title | CHEMICAL COMMUNICATIONS | - |
| dc.contributor.affiliatedAuthor | Park, CE | - |
| dc.identifier.scopusid | 2-s2.0-69549120137 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 43 | - |
| dc.description.scptc | 55 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordPlus | DERIVATIVES | - |
| dc.subject.keywordPlus | ACENES | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
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- 박찬언PARK, CHAN EON
- Dept. of Chemical Enginrg