Solution-processed inorganic p-channel transistors: Recent advances and perspectives
SCIE
SCOPUS
- Title
- Solution-processed inorganic p-channel transistors: Recent advances and perspectives
- Authors
- NOH, YONG YOUNG; Ao Liu; Huihui Zhu
- Date Issued
- 2019-01
- Publisher
- Elsevier BV
- Abstract
- For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-film transistors and complementary metal-oxide semiconductor-based integrated circuits. We first introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a specific focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/99702
- DOI
- 10.1016/j.mser.2018.11.001
- ISSN
- 0927-796X
- Article Type
- Article
- Citation
- Materials Science and Engineering: R: Reports, vol. 135, page. 85 - 100, 2019-01
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