DC Field | Value | Language |
---|---|---|
dc.contributor.author | BAEK, CHANG KI | - |
dc.contributor.author | Seungho Lee | - |
dc.contributor.author | KIM, KIHYUN | - |
dc.contributor.author | Deok-Hong Kang | - |
dc.contributor.author | MEYYAPPAN, MEYYA | - |
dc.date.accessioned | 2019-12-04T08:11:07Z | - |
dc.date.available | 2019-12-04T08:11:07Z | - |
dc.date.created | 2019-12-02 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100284 | - |
dc.description.abstract | Thermoelectric modules based on silicon nanowires (Si-NI/Vs) have recently attracted significant attention as they show an improved thermoelectric efficiency due to a decrease in thermal conductivity. Here, we adopt a top-down fabrication method to dramatically reduce the thermal conductivity of vertical Si-NWs. The thermal conductivity of a vertical Si-NW is significantly suppressed with an increasing surface roughness, decreasing diameter, and increasing doping concentration. This large suppression is caused by enhanced phonon scattering, which depends on the phonon wavelength. The boron- and phosphorus-doped rough Si-NWs with a diameter of 200 nm and surface roughness of 6.88 nm show the lowest thermal conductivity of 10.1 and 14.8 W.m(-1).K-1, respectively, which are 5.1- and 3.6-fold lower than that of a smooth intrinsic nanowire and 14.8- and 10.1-fold lower than that of bulk silicon. A thermoelectric module was fabricated using this doped rough Si-NW array, and its thermoelectric performance is compared with previously reported Si-NW modules. The fabricated module exhibits an excellent performance with an open circuit voltage of 216.8 mV.cm(-2) and a maximum power of 3.74 mu W.cm(-2) under a temperature difference of 180 K, the highest reported for Si-NW thermoelectric modules. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | Nano Letters | - |
dc.title | Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.8b03822 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Nano Letters, v.19, no.2, pp.747 - 755 | - |
dc.identifier.wosid | 000459222300016 | - |
dc.citation.endPage | 755 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 747 | - |
dc.citation.title | Nano Letters | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | BAEK, CHANG KI | - |
dc.contributor.affiliatedAuthor | Seungho Lee | - |
dc.contributor.affiliatedAuthor | KIM, KIHYUN | - |
dc.contributor.affiliatedAuthor | MEYYAPPAN, MEYYA | - |
dc.identifier.scopusid | 2-s2.0-85060709905 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | PHONON TRANSPORT | - |
dc.subject.keywordPlus | POROUS SILICON | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | HEAT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Vertical silicon nanowire | - |
dc.subject.keywordAuthor | top-down technique | - |
dc.subject.keywordAuthor | phonon scattering | - |
dc.subject.keywordAuthor | thermal conductivity | - |
dc.subject.keywordAuthor | surface roughness | - |
dc.subject.keywordAuthor | thermoelectric module | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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