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Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)(3) SCIE SCOPUS
- Title
- Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)(3)
- Date Issued
- 1999-12
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The chemical and deposition properties of RuO2 thin films with the liquid precursor Ru(OD)(3) (OD = 2,4-octanedionate) have been investigated. By thermal analysis, Ru(OD)(3) was thermally stable in Ar atmosphere and rapidly reacted with oxygen at about 270 degrees C. The RuO2 thin films deposited at 250-550 degrees C had a dense and octahedral-like morphology and the minimum resistivity was 48 mu Omega cm at a deposition temperature of 350 degrees C. (C) 1999 The Electrochemical Society. S1099-0062(99)06-130-1. All rights reserved.
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 2, no. 12, page. 622 - 623, 1999-12
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