Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN
SCIE
SCOPUS
- Title
- Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN
- Authors
- Kim, SY; Lee, JL
- Date Issued
- 2004-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We report low-resistant and high reflective ohmic contact on p-type GaN using a promising Ni/Au/indium-tin oxide (ITO)/Ag contact scheme. Specific contact resistivity as low as 3.2x10(-5) Omega cm(2) was obtained from Ni(20Angstrom)/Au (30Angstrom)/ITO (600 Angstrom)/Ag (1200 Angstrom) contact annealed at 500degreesC under an oxidizing ambient. The relative reflectance of contact was evaluated to be 78.8%, which is 14.6% higher than the Ni/Au contact. The ITO layer acted as a diffusion barrier for both indiffusion of Ag and out-diffusion of Au, providing a low resistant and highly reflective ohmic contact on p-type GaN. (C) 2004 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10109
- DOI
- 10.1149/1.1676115
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 5, page. G102 - G104, 2004-01
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