DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, SEYOUNG | - |
dc.date.accessioned | 2020-04-14T00:52:03Z | - |
dc.date.available | 2020-04-14T00:52:03Z | - |
dc.date.created | 2020-04-13 | - |
dc.date.issued | 2009-02-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/103401 | - |
dc.description.abstract | We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm(2)/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value. | - |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.title | Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3077021 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.94, no.6 | - |
dc.identifier.wosid | 000263409400055 | - |
dc.citation.number | 6 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | KIM, SEYOUNG | - |
dc.identifier.scopusid | 2-s2.0-60349109113 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordAuthor | alumina | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | insulated gate field effect transistors | - |
dc.subject.keywordAuthor | semiconductor device models | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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