Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
SCOPUS
- Title
- Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
- Authors
- KIM, SEYOUNG
- Date Issued
- 2009-02-09
- Publisher
- American Institute of Physics
- Abstract
- We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm(2)/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/103401
- DOI
- 10.1063/1.3077021
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 94, no. 6, 2009-02-09
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- There are no files associated with this item.
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