DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, SH | - |
dc.contributor.author | Park, CG | - |
dc.date.accessioned | 2015-06-25T02:13:20Z | - |
dc.date.available | 2015-06-25T02:13:20Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-05-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000004185 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10547 | - |
dc.description.abstract | Misfit relaxation by dislocations in perovskite SrRuO3/SrTiO3 (001) heterostructure with low lattice mismatch (f=0.64%) was studied. Pure edge misfit dislocations (MDs) with a Burgers vector of the a<011> type were found to be the major interfacial defects responsible for the misfit relief. They were introduced by half-loops expansion from the film surface as well as by extension of pre-existing dislocations in the substrate. These 45degrees-MDs formed along the <100> directions in a rectangular grid pattern, preferentially at surface steps of the TiO2-terminated SrTiO3 (STO) substrate. At film thicknesses much higher than the critical film thickness (h(c)), however, the MD spacing was not reduced but saturated in a nearly constant value far above the equilibrium prediction (similar to61.4 nm). The saturated spacing of MDs corresponds to roughly the ledge distances on the STO surface (120-150 nm). It is suggested that difficulties in the multiplication of MDs by the already-formed ones lead to the abnormally high residual strain. Further accumulation of residual strain results in microstructural modifications such as surface undulations and the two-layered structure along the growth direction. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Misfit strain relaxation by dislocations in SrRuO3/SrTiO3 (001) heteroepitaxy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1690484 | - |
dc.author.google | Oh, SH | en_US |
dc.author.google | Park, CG | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 9 | en_US |
dc.relation.startpage | 4691 | en_US |
dc.relation.lastpage | 4704 | en_US |
dc.contributor.id | 10069857 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.95, no.9, pp.4691 - 4704 | - |
dc.identifier.wosid | 000220875400024 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4704 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 4691 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.identifier.scopusid | 2-s2.0-2442691955 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 40 | - |
dc.description.scptc | 39 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SRRUO3 THIN-FILMS | - |
dc.subject.keywordPlus | FERROELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | THREADING DISLOCATIONS | - |
dc.subject.keywordPlus | DOMAIN CONFIGURATIONS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | MAGNETIC-ANISOTROPY | - |
dc.subject.keywordPlus | PEROVSKITE FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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