Misfit strain relaxation by dislocations in SrRuO3/SrTiO3 (001) heteroepitaxy
SCIE
SCOPUS
- Title
- Misfit strain relaxation by dislocations in SrRuO3/SrTiO3 (001) heteroepitaxy
- Authors
- Oh, SH; Park, CG
- Date Issued
- 2004-05-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Misfit relaxation by dislocations in perovskite SrRuO3/SrTiO3 (001) heterostructure with low lattice mismatch (f=0.64%) was studied. Pure edge misfit dislocations (MDs) with a Burgers vector of the a<011> type were found to be the major interfacial defects responsible for the misfit relief. They were introduced by half-loops expansion from the film surface as well as by extension of pre-existing dislocations in the substrate. These 45degrees-MDs formed along the <100> directions in a rectangular grid pattern, preferentially at surface steps of the TiO2-terminated SrTiO3 (STO) substrate. At film thicknesses much higher than the critical film thickness (h(c)), however, the MD spacing was not reduced but saturated in a nearly constant value far above the equilibrium prediction (similar to61.4 nm). The saturated spacing of MDs corresponds to roughly the ledge distances on the STO surface (120-150 nm). It is suggested that difficulties in the multiplication of MDs by the already-formed ones lead to the abnormally high residual strain. Further accumulation of residual strain results in microstructural modifications such as surface undulations and the two-layered structure along the growth direction. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10547
- DOI
- 10.1063/1.1690484
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 95, no. 9, page. 4691 - 4704, 2004-05-01
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