Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes
SCIE
SCOPUS
- Title
- Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes
- Authors
- Wonseok Lee; Min-Ho Kim,; Di Zhu; Ahmed N. Noemaun; Kim, JK; Schubert, EF
- Date Issued
- 2010-03-15
- Publisher
- AIP
- Abstract
- We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confinement of carriers to the MQW active region. In comparison with GaInN LEDs with conventional GaN QBs, the GaInN/GaInN LEDs show a reduced blueshift of the peak wavelength with increasing injection current and a reduced forward voltage. In addition, we investigate the density of pits emerging on top of the MQW layer that are correlated with V-defects and act as a path for the reverse leakage current. The GaInN/GaInN MQW structure has a lower pit density than the GaInN/GaN MQW structure as well as a lower reverse leakage current. Finally, the GaInN/GaInN MQW LEDs show higher light output power and external quantum efficiency at high injection currents compared to the conventional GaInN/GaN MQW LEDs. We attribute these results to the reduced polarization mismatch and the reduced lattice mismatch in the GaInN/GaInN MQW active region.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10632
- DOI
- 10.1063/1.3327425
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 107, no. 6, page. 63102, 2010-03-15
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