DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyungwoo | - |
dc.contributor.author | Kashir, Alireza | - |
dc.contributor.author | Oh, Seungyeol | - |
dc.contributor.author | Jang, Hojung | - |
dc.contributor.author | Hwang, Hyunsang | - |
dc.date.accessioned | 2022-03-02T09:40:20Z | - |
dc.date.available | 2022-03-02T09:40:20Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/110086 | - |
dc.description.abstract | We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/Hf0.5Zr0.5O2 (HZO)/TiN devices by controlling the number of oxygen vacancies and carbon contaminants. The ferroelectric properties of HZO film after HPOA at 250 degrees C for 30 min under different oxygen pressures from 0 to 80 bar were evaluated by electrical and structural characterizations. We found that a sample treated with an oxygen pressure at 40 bar exhibited large switchable polarization (2P(r)) of approximately 38 and 47 mu C cm(-2) in its pristine and wake-up states, respectively. Compared to a control sample, an approximately 40% reduction in the wake-up effect was achieved after HPOA at 40 bar. Improved ferroelectric properties of HZO film can be explained by the appropriate amount of oxygen vacancies and reduced carbon contaminants after HPOA. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.title | Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6528/abfb9a | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.32, no.31 | - |
dc.identifier.wosid | 000655709200001 | - |
dc.citation.number | 31 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
dc.identifier.scopusid | 2-s2.0-85107090176 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | ENDURANCE | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordAuthor | high-pressure oxygen anneal | - |
dc.subject.keywordAuthor | high remnant polarization | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.subject.keywordAuthor | carbon contaminant | - |
dc.subject.keywordAuthor | ferroelectric property | - |
dc.subject.keywordAuthor | wake-up effect | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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