Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device
SCIE
SCOPUS
- Title
- Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device
- Authors
- Kim, Hyungwoo; Kashir, Alireza; Oh, Seungyeol; Jang, Hojung; Hwang, Hyunsang
- Date Issued
- 2021-07
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/Hf0.5Zr0.5O2 (HZO)/TiN devices by controlling the number of oxygen vacancies and carbon contaminants. The ferroelectric properties of HZO film after HPOA at 250 degrees C for 30 min under different oxygen pressures from 0 to 80 bar were evaluated by electrical and structural characterizations. We found that a sample treated with an oxygen pressure at 40 bar exhibited large switchable polarization (2P(r)) of approximately 38 and 47 mu C cm(-2) in its pristine and wake-up states, respectively. Compared to a control sample, an approximately 40% reduction in the wake-up effect was achieved after HPOA at 40 bar. Improved ferroelectric properties of HZO film can be explained by the appropriate amount of oxygen vacancies and reduced carbon contaminants after HPOA.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/110086
- DOI
- 10.1088/1361-6528/abfb9a
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 32, no. 31, 2021-07
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