Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

Abstract

Adsorption and reactions of tetrabutoxysilane (Si(OC4H9)(4)) on a Si(100) surface were investigated using temperature programmed desorption and x-ray photoelectron spectroscopy. Physisorbed tetrabutoxysilane undergoes C-O bond scission to form -O-Si(OC4H9)(3) and butyl species on Si(100) at 200 K. It is observed that further C-O bond scission takes place sequentially in the temperature range of 200-500 K. Main desorption products are butene and hydrogen, which are desorbed at 410 K and 820 K, respectively. We propose that the production of butene takes place through beta-hydride elimination of the butyl group on Si(100). (c) 2005 American Vacuum Society.