DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, SW | - |
dc.contributor.author | Kim, HU | - |
dc.contributor.author | Rhee, SW | - |
dc.date.accessioned | 2015-06-25T02:35:14Z | - |
dc.date.available | 2015-06-25T02:35:14Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000010137 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11248 | - |
dc.description.abstract | Dry etching of Cu film was achieved via oxidation process using oxidizing agents such as O-2 plasma, O-3, Or O-3 plasma, followed by the removal process of the copper oxides (CuOx) by reaction with hexafluoroacetylacetone [H(hfac)] to form volatile copper compound, [bis-hexafluoroacetylacetonate: Cu(hfac)(2)] and H2O. The etching rate was increased with the increase of etchant [H(hfac) and O-3] flow rate, plasma power, and substrate temperature. Oxygen radical concentration is the highest in the plasma generated with ozone, which leads to the highest etching rate up to 1400 Angstrom/min. The etch rate dependence on the substrate temperature showed the activation energy of about 7 kcal/mol and gas phase transport seems to be the rate controlling step. (C) 1999 American Vacuum Society. [S0734-211X(99)03201-1]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Dry etching of copper film with hexafluoroacetylacetone via oxidation process | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1116/1.590528 | - |
dc.author.google | Kang, SW | en_US |
dc.author.google | Kim, HU | en_US |
dc.author.google | Rhee, SW | en_US |
dc.relation.volume | 17 | en_US |
dc.relation.issue | 1 | en_US |
dc.relation.startpage | 154 | en_US |
dc.relation.lastpage | 157 | en_US |
dc.contributor.id | 10052631 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.17, no.1, pp.154 - 157 | - |
dc.identifier.wosid | 000078654300026 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 157 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 154 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-0006411120 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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