Dry etching of copper film with hexafluoroacetylacetone via oxidation process
SCIE
SCOPUS
- Title
- Dry etching of copper film with hexafluoroacetylacetone via oxidation process
- Authors
- Kang, SW; Kim, HU; Rhee, SW
- Date Issued
- 1999-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Dry etching of Cu film was achieved via oxidation process using oxidizing agents such as O-2 plasma, O-3, Or O-3 plasma, followed by the removal process of the copper oxides (CuOx) by reaction with hexafluoroacetylacetone [H(hfac)] to form volatile copper compound, [bis-hexafluoroacetylacetonate: Cu(hfac)(2)] and H2O. The etching rate was increased with the increase of etchant [H(hfac) and O-3] flow rate, plasma power, and substrate temperature. Oxygen radical concentration is the highest in the plasma generated with ozone, which leads to the highest etching rate up to 1400 Angstrom/min. The etch rate dependence on the substrate temperature showed the activation energy of about 7 kcal/mol and gas phase transport seems to be the rate controlling step. (C) 1999 American Vacuum Society. [S0734-211X(99)03201-1].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11248
- DOI
- 10.1116/1.590528
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 1, page. 154 - 157, 1999-01
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