A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications
SCIE
SCOPUS
- Title
- A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications
- Authors
- Oh, Kyounghwan; Kim, Hyangwoo; Park, Kangwook; Lee, Hyung-Jin; Kong, Byoung Don; Baek, Chang-Ki
- Date Issued
- 2022-11
- Publisher
- Institute of Physics
- Abstract
- © 2022 The Author(s). Published by IOP Publishing Ltd.A drain-extended fin field-effect transistor (FinFET) with a dual material gate (DMG) and a high-k field plate (FP), named DF-DeFF, is proposed for high-voltage radio frequency (RF) applications. The FP induces the charge variation in the drain extension, which appears as either the extended depletion in the gate-off state or the electron accumulation in the gate-on state. Along with the FP, the DMG forms a step-like potential variation along the channel, which leads to electron acceleration and the screening effect on the drain-to-source voltage (V DS). These effects give significant advantages to the DC characteristics, including breakdown voltage (V BD) and on-resistance (R on), and the RF characteristics, including transconductance (g m) and output-resistance (r o). Compared to the latest high-voltage RF FinFETs, the DF-DeFF shows a drastic improvement in the major performance indicators such as V BD, cut-off frequency (f T), and maximum oscillation frequency (f MAX). These results indicate that DF-DeFF is a FinFET with sufficient competitiveness even in high voltage circumstances.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/114315
- DOI
- 10.1088/1361-6641/ac93ac
- ISSN
- 0268-1242
- Article Type
- Article
- Citation
- Semiconductor Science and Technology, vol. 37, no. 11, 2022-11
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- There are no files associated with this item.
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