Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
SCIE
SCOPUS
- Title
- Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
- Authors
- 김시현; HWANG, HYEON JUN; Min Gyu Kwon; YOO, TAEJIN; Kyoung Eun Chang; LEE, BYOUNG HUN
- Date Issued
- 2021-05
- Publisher
- WALTER DE GRUYTER GMBH
- Abstract
- The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/115834
- DOI
- 10.1515/nanoph-2021-0002
- ISSN
- 2192-8606
- Article Type
- Article
- Citation
- Nanophotonics, vol. 10, no. 5, page. 1573 - 1579, 2021-05
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- There are no files associated with this item.
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