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Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (~ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment Engineering
- Title
- Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (~ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment Engineering
- Date Issued
- 2023-12-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- We investigate the effect of material design and UV treatment on nanoscale (d = 50 nm) ovonic threshold switch (OTS) devices for selector-only memory (SOM) applications. By characterizing OTS devices with varying material compositions, we identified selenium (Se) as a key element for SOM operation. The optimized OTS device exhibited a large memory window (MW > 1.2 V) with an ultra-fast write operation speed (~ 10 ns). Additionally, we demonstrate that interface engineering with proper UV treatment significantly improved device variability characteristics. UV-treated OTS devices demonstrated excellent retention (> 10 years at RT) and cycling endurance properties (> 10
- Article Type
- Conference
- Citation
- 2023 International Electron Devices Meeting, IEDM 2023, 2023-12-12
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg