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Cited 35 time in webofscience Cited 37 time in scopus
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dc.contributor.authorCho, DY-
dc.contributor.authorLee, JM-
dc.contributor.authorOh, SJ-
dc.contributor.authorJang, H-
dc.contributor.authorKim, JY-
dc.contributor.authorPark, JH-
dc.contributor.authorTanaka, A-
dc.date.accessioned2015-06-25T03:04:43Z-
dc.date.available2015-06-25T03:04:43Z-
dc.date.created2009-09-11-
dc.date.issued2007-10-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000007277en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12168-
dc.description.abstractWe investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO similar to 1.8) using soft x-ray absorption spectroscopy at O K and Hf N-3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K-edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N-3-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper [M. Venkatesan , Nature 430, 630 (2004)].-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInfluence of oxygen vacancies on the electronic structure of HfO2 films-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.76.165411-
dc.author.googleCho, DYen_US
dc.author.googleLee, JMen_US
dc.author.googleTanaka, Aen_US
dc.author.googlePark, JHen_US
dc.author.googleKim, JYen_US
dc.author.googleJang, Hen_US
dc.author.googleOh, SJen_US
dc.relation.volume76en_US
dc.relation.issue16en_US
dc.contributor.id10080407en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.76, no.16-
dc.identifier.wosid000250620600097-
dc.date.tcdate2019-01-01-
dc.citation.number16-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume76-
dc.contributor.affiliatedAuthorPark, JH-
dc.identifier.scopusid2-s2.0-35148872144-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc26-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusBAND ALIGNMENT-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordPlusHAFNIUM-
dc.subject.keywordPlusINSTABILITY-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusSILICATE-
dc.subject.keywordPlusDEFECTS-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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