DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, DY | - |
dc.contributor.author | Lee, JM | - |
dc.contributor.author | Oh, SJ | - |
dc.contributor.author | Jang, H | - |
dc.contributor.author | Kim, JY | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Tanaka, A | - |
dc.date.accessioned | 2015-06-25T03:04:43Z | - |
dc.date.available | 2015-06-25T03:04:43Z | - |
dc.date.created | 2009-09-11 | - |
dc.date.issued | 2007-10 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.other | 2015-OAK-0000007277 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12168 | - |
dc.description.abstract | We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO similar to 1.8) using soft x-ray absorption spectroscopy at O K and Hf N-3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K-edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N-3-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper [M. Venkatesan , Nature 430, 630 (2004)]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Influence of oxygen vacancies on the electronic structure of HfO2 films | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1103/PhysRevB.76.165411 | - |
dc.author.google | Cho, DY | en_US |
dc.author.google | Lee, JM | en_US |
dc.author.google | Tanaka, A | en_US |
dc.author.google | Park, JH | en_US |
dc.author.google | Kim, JY | en_US |
dc.author.google | Jang, H | en_US |
dc.author.google | Oh, SJ | en_US |
dc.relation.volume | 76 | en_US |
dc.relation.issue | 16 | en_US |
dc.contributor.id | 10080407 | en_US |
dc.relation.journal | PHYSICAL REVIEW B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.76, no.16 | - |
dc.identifier.wosid | 000250620600097 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 16 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 76 | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.scopusid | 2-s2.0-35148872144 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 26 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | BAND ALIGNMENT | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | SILICATE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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