Influence of oxygen vacancies on the electronic structure of HfO2 films
SCIE
SCOPUS
- Title
- Influence of oxygen vacancies on the electronic structure of HfO2 films
- Authors
- Cho, DY; Lee, JM; Oh, SJ; Jang, H; Kim, JY; Park, JH; Tanaka, A
- Date Issued
- 2007-10
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO similar to 1.8) using soft x-ray absorption spectroscopy at O K and Hf N-3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K-edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N-3-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper [M. Venkatesan , Nature 430, 630 (2004)].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12168
- DOI
- 10.1103/PhysRevB.76.165411
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 76, no. 16, 2007-10
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.