DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Ao | - |
dc.contributor.author | Kim, Yong-Sung | - |
dc.contributor.author | Kim, Min Gyu | - |
dc.contributor.author | Reo, Youjin | - |
dc.contributor.author | Zou, Taoyu | - |
dc.contributor.author | Choi, Taesu | - |
dc.contributor.author | Bai, Sai | - |
dc.contributor.author | Zhu, Huihui | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.date.accessioned | 2024-08-08T01:20:49Z | - |
dc.date.available | 2024-08-08T01:20:49Z | - |
dc.date.created | 2024-05-31 | - |
dc.date.issued | 2024-04 | - |
dc.identifier.issn | 0028-0836 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/123912 | - |
dc.description.abstract | <jats:title>Abstract</jats:title><jats:p>Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. <jats:sup>1</jats:sup>), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays<jats:sup>2–8</jats:sup>. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal–oxide–semiconductor technology and integrated circuits<jats:sup>9–11</jats:sup>. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5<jats:italic>p</jats:italic> bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the <jats:italic>p-</jats:italic>orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> and on/off current ratios of 10<jats:sup>6</jats:sup>–10<jats:sup>7</jats:sup>, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.</jats:p> | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.relation.isPartOf | Nature | - |
dc.title | Selenium-alloyed tellurium oxide for amorphous p-channel transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41586-024-07360-w | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Nature, v.629, no.8013, pp.798 - 802 | - |
dc.identifier.wosid | 001223744000001 | - |
dc.citation.endPage | 802 | - |
dc.citation.number | 8013 | - |
dc.citation.startPage | 798 | - |
dc.citation.title | Nature | - |
dc.citation.volume | 629 | - |
dc.contributor.affiliatedAuthor | Reo, Youjin | - |
dc.contributor.affiliatedAuthor | Noh, Yong-Young | - |
dc.identifier.scopusid | 2-s2.0-85192739332 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article; Early Access | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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