Selenium-alloyed tellurium oxide for amorphous p-channel transistors
SCIE
SCOPUS
- Title
- Selenium-alloyed tellurium oxide for amorphous p-channel transistors
- Authors
- Liu, Ao; Kim, Yong-Sung; Kim, Min Gyu; Reo, Youjin; Zou, Taoyu; Choi, Taesu; Bai, Sai; Zhu, Huihui; Noh, Yong-Young
- Date Issued
- 2024-04
- Publisher
- Nature Publishing Group
- Abstract
- AbstractCompared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2–8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal–oxide–semiconductor technology and integrated circuits9–11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm2 V−1 s−1 and on/off current ratios of 106–107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/123912
- DOI
- 10.1038/s41586-024-07360-w
- ISSN
- 0028-0836
- Article Type
- Article
- Citation
- Nature, vol. 629, no. 8013, page. 798 - 802, 2024-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.