DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, X | - |
dc.contributor.author | Sadaf, SM | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Biju, KP | - |
dc.contributor.author | Cao, X | - |
dc.contributor.author | Son, M | - |
dc.contributor.author | Choudhury, SH | - |
dc.contributor.author | Jung, GY | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2015-07-07T19:08:17Z | - |
dc.date.available | 2015-07-07T19:08:17Z | - |
dc.date.created | 2013-03-08 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 2162-8742 | - |
dc.identifier.other | 2015-OAK-0000027053 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13120 | - |
dc.description.abstract | Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared toW/WO3-x/Pt structure, after the introduction of a thin NbOx film between WO3-x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A combined filamentary conduction model is proposed to clarify the role of NbOx layer on the resistive switching stabilization during the forming process. (C) 2012 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | Electrochemical Society, Inc.. | - |
dc.relation.isPartOf | ECS SOLID STATE LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | TRANSITION | - |
dc.title | Improvement of resistive switching uniformity by introducing a thin NbOx interface layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/2.004205SSL | - |
dc.author.google | Liu, X | en_US |
dc.author.google | Sadaf, SM | en_US |
dc.author.google | Kim, S | en_US |
dc.author.google | Biju, KP | en_US |
dc.author.google | Cao, X | en_US |
dc.author.google | Son, M | en_US |
dc.author.google | Choudhury, SH | en_US |
dc.author.google | Jung, GY | en_US |
dc.author.google | Hwang, H | en_US |
dc.relation.volume | 1 | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | Q35 | en_US |
dc.relation.lastpage | Q38 | en_US |
dc.contributor.id | 10079928 | en_US |
dc.relation.journal | ECS SOLID STATE LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ECS SOLID STATE LETTERS, v.1, no.5, pp.Q35 - Q38 | - |
dc.identifier.wosid | 000318341000009 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | Q38 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | Q35 | - |
dc.citation.title | ECS SOLID STATE LETTERS | - |
dc.citation.volume | 1 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84880554101 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.description.scptc | 12 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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