Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
SCOPUS
- Title
- Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
- Authors
- Liu, X; Sadaf, SM; Kim, S; Biju, KP; Cao, X; Son, M; Choudhury, SH; Jung, GY; Hwang, H
- Date Issued
- 2012-08
- Publisher
- Electrochemical Society, Inc..
- Abstract
- Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared toW/WO3-x/Pt structure, after the introduction of a thin NbOx film between WO3-x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A combined filamentary conduction model is proposed to clarify the role of NbOx layer on the resistive switching stabilization during the forming process. (C) 2012 The Electrochemical Society.
- Keywords
- NONVOLATILE MEMORY; TRANSITION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13120
- DOI
- 10.1149/2.004205SSL
- ISSN
- 2162-8742
- Article Type
- Article
- Citation
- ECS SOLID STATE LETTERS, vol. 1, no. 5, page. Q35 - Q38, 2012-08
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