DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun-Min Jung | - |
dc.contributor.author | Eun Kwang Lee | - |
dc.contributor.author | Min Choi | - |
dc.contributor.author | Dongbin Shin | - |
dc.contributor.author | In-Yup Jeon | - |
dc.contributor.author | Jeong-Min Seo | - |
dc.contributor.author | Hu Young Jeong | - |
dc.contributor.author | Noejung Park | - |
dc.contributor.author | Oh, JH | - |
dc.contributor.author | Jong-Beom Baek | - |
dc.date.accessioned | 2016-03-31T08:01:47Z | - |
dc.date.available | 2016-03-31T08:01:47Z | - |
dc.date.created | 2014-09-29 | - |
dc.date.issued | 2014-02-24 | - |
dc.identifier.issn | 1433-7851 | - |
dc.identifier.other | 2014-OAK-0000030300 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14401 | - |
dc.description.abstract | Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N-2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66atom%, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.relation.isPartOf | ANGEWANDTE CHEMIE INTERNATIONAL EDITION | - |
dc.subject | boron | - |
dc.subject | doping | - |
dc.subject | field effect transistors | - |
dc.subject | graphene | - |
dc.subject | nitrogen | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ENERGY-CONVERSION | - |
dc.subject | TRANSPARENT | - |
dc.subject | FUNCTIONALIZATION | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | NANOPLATELETS | - |
dc.subject | OXIDE | - |
dc.subject | AREA | - |
dc.title | Direct Solvothermal Synthesis of B/N-Doped Graphene | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1002/ANIE.201310260 | - |
dc.author.google | Jung, SM | - |
dc.author.google | Lee, EK | - |
dc.author.google | Choi, M | - |
dc.author.google | Shin, D | - |
dc.author.google | Jeon, IY | - |
dc.author.google | Seo, JM | - |
dc.author.google | Jeong, HY | - |
dc.author.google | Park, N | - |
dc.author.google | Oh, JH | - |
dc.author.google | Baek, JB | - |
dc.relation.volume | 53 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 2398 | - |
dc.relation.lastpage | 2401 | - |
dc.contributor.id | 10165224 | - |
dc.relation.journal | ANGEWANDTE CHEMIE INTERNATIONAL EDITION | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ANGEWANDTE CHEMIE INTERNATIONAL EDITION, v.53, no.9, pp.2398 - 2401 | - |
dc.identifier.wosid | 000331512200010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2401 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2398 | - |
dc.citation.title | ANGEWANDTE CHEMIE INTERNATIONAL EDITION | - |
dc.citation.volume | 53 | - |
dc.contributor.affiliatedAuthor | Oh, JH | - |
dc.identifier.scopusid | 2-s2.0-84894445763 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 34 | - |
dc.description.scptc | 33 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | FUNCTIONALIZATION | - |
dc.subject.keywordPlus | NANOPLATELETS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | AREA | - |
dc.subject.keywordAuthor | boron | - |
dc.subject.keywordAuthor | doping | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | nitrogen | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
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