Direct Solvothermal Synthesis of B/N-Doped Graphene
SCIE
SCOPUS
- Title
- Direct Solvothermal Synthesis of B/N-Doped Graphene
- Authors
- Sun-Min Jung; Eun Kwang Lee; Min Choi; Dongbin Shin; In-Yup Jeon; Jeong-Min Seo; Hu Young Jeong; Noejung Park; Oh, JH; Jong-Beom Baek
- Date Issued
- 2014-02-24
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Abstract
- Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N-2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66atom%, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.
- Keywords
- boron; doping; field effect transistors; graphene; nitrogen; THIN-FILM TRANSISTORS; ENERGY-CONVERSION; TRANSPARENT; FUNCTIONALIZATION; SEMICONDUCTORS; NANOPLATELETS; OXIDE; AREA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14401
- DOI
- 10.1002/ANIE.201310260
- ISSN
- 1433-7851
- Article Type
- Article
- Citation
- ANGEWANDTE CHEMIE INTERNATIONAL EDITION, vol. 53, no. 9, page. 2398 - 2401, 2014-02-24
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