DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, DY | - |
dc.contributor.author | Lee, KT | - |
dc.contributor.author | Baek, CK | - |
dc.contributor.author | Sohn, CW | - |
dc.contributor.author | Sagong, HC | - |
dc.contributor.author | Jung, EY | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-03-31T08:10:58Z | - |
dc.date.available | 2016-03-31T08:10:58Z | - |
dc.date.created | 2011-11-25 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2011-OAK-0000029380 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14742 | - |
dc.description.abstract | This letter describes the dielectric degradation and breakdown characteristics of HfSiON/SiON gate dielectric nMOSFETs using the stress-induced leakage current (SILC) analysis. The nMOSFETs show progressive breakdown (PBD) under substrate injection stress, and its characteristic changes as the stress voltage increases, from slow PBD (s-PBD) only, then to a combination of s-PBD and fast PBD (f-PBD), and finally to f-PBD only. It is found that the SILC of nMOSFETs is caused by trap-assisted tunneling mainly through the preexisting deep traps of the high-k layer and the stress-induced traps of the interfacial layer (IL). The stress-induced defects under substrate injection stress are generated within the IL rather than the high-k layer, and the time-dependent dielectric breakdown of the nMOSFETs is driven by the degradation of the IL. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs | - |
dc.type | Article | - |
dc.contributor.college | 창의IT융합공학과 | - |
dc.identifier.doi | 10.1109/LED.2011.2161861 | - |
dc.author.google | Choi, DY | - |
dc.author.google | Lee, KT | - |
dc.author.google | Baek, CK | - |
dc.author.google | Sohn, CW | - |
dc.author.google | Sagong, HC | - |
dc.author.google | Jung, EY | - |
dc.author.google | Lee, JS | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 1319 | - |
dc.relation.lastpage | 1321 | - |
dc.contributor.id | 10644344 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.10, pp.1319 - 1321 | - |
dc.identifier.wosid | 000295340300001 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1321 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1319 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Baek, CK | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-80053565169 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 7 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | HfSiON | - |
dc.subject.keywordAuthor | high-k dielectric | - |
dc.subject.keywordAuthor | interfacial layer (IL) | - |
dc.subject.keywordAuthor | positive bias temperature instability (BTI) (PBTI) | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | SiON | - |
dc.subject.keywordAuthor | stress-induced leakage current (SILC) | - |
dc.subject.keywordAuthor | time-dependent dielectric breakdown (TDDB) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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