Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices
SCIE
SCOPUS
- Title
- Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices
- Authors
- Gil Ho Gu; Dong Hyun Jang; Ki Bum Nam; Park, CG
- Date Issued
- 2013-08
- Publisher
- Microscopy and Microanalysis
- Abstract
- In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p-GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n-GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.
- Keywords
- composition fluctuation of In; well-width fluctuation; atom probe; STEM; InGaN; LED; MOLECULAR-BEAM; SEGREGATION; INDIUM; PHOTOLUMINESCENCE; IMPACT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14990
- DOI
- 10.1017/S1431927613012427
- ISSN
- 1431-9276
- Article Type
- Article
- Citation
- Microscopy and Microanalysis, vol. 19, page. 99 - 104, 2013-08
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