Efficient statistical leakage analysis using deterministic cell leakage models
SCIE
SCOPUS
- Title
- Efficient statistical leakage analysis using deterministic cell leakage models
- Authors
- Jae Hoon Kim; Kim, YH
- Date Issued
- 2013-09
- Publisher
- ELSEVIER
- Abstract
- This paper presents an efficient approach to statistical leakage analysis (SLA) that can estimate the arbitrary n-sigma leakage currents of the VLSI system for the probability density function (PDF) of a lognormal distribution. Unlike existing SLA approaches, the proposed method uses deterministic cell leakage models and gate-level deterministic leakage analysis, and thus, provides significantly reduced analysis complexity. Providing the n-sigma chip leakage current for the PDF of WM-based SLA with a computational complexity of O(N), where N is the number of cells in a chip, the proposed approach is a promising candidate for the analysis of recent technology (comprising billions of logic cells in a chip) to address the high-complexity of conventional approaches to SLA. Compared to conventional WM-based SLA, when the value of n was 5.1803, 3.6022, and 2.8191, the average absolute errors of n-sigma chip leakage current exhibited by the proposed approach were 5.08%, 4.73%, and 4.45%, respectively. (C) 2013 Elsevier Ltd. All rights reserved.
- Keywords
- Wilkinson' s method; Computational complexity; Gate-level deterministic leakage analysis; PARAMETRIC YIELD ESTIMATION; VARIABILITY; POWER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15221
- DOI
- 10.1016/J.MEJO.2013.06.014
- ISSN
- 0026-2692
- Article Type
- Article
- Citation
- Microelectronics Journal, vol. 44, no. 9, page. 764 - 773, 2013-09
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